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Infrared Light Emitting Diodes
LNA4401L
GaAlAs Infrared Light Emitting Diode
ø4.6±0.15
Unit : mm
Glass lens
For optical control systems Features
High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) TO-18 standard type package
12.7 min. 6.3±0.3
2-ø0.45±0.05 2.54±0.25
0 0± 1. .2 .1 5
3˚ 45±
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
1.
2 1
Symbol PD IF IFP
*
Ratings 190 100 1 3 –25 to +85 –30 to +100
Unit mW mA A V ˚C ˚C
0± 0
ø5.75 max.
1: Anode 2: Cathode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.
LNA4401L Datasheet
