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LNA4801L - GaAlAs Infrared Light Emitting Diode

Features

  • Fast response and high-speed modulation capability : fC = 20 MHz (typ. ) Wide directivity : θ = 22 deg. (typ. ) Transparent epoxy resin package ø3.8±0.2 ø3.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
  • Symbol PD IF IFP.
  • VR Topr Tstg Ratings 190 100 1 3.
  • 25 to +85.
  • 30 to +100 Unit mW mA A V ˚C ˚C 1.0 15.0±1.0 4.5±0.3 5.0±0.2 0.6.

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Datasheet Details

Part number LNA4801L
Manufacturer Panasonic
File Size 34.97 KB
Description GaAlAs Infrared Light Emitting Diode
Datasheet download datasheet LNA4801L Datasheet
Additional preview pages of the LNA4801L datasheet.

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Full PDF Text Transcription

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Infrared Light Emitting Diodes LNA4801L GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 (1.5) 2.54 1.7 For optical control systems Features Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 22 deg. (typ.) Transparent epoxy resin package ø3.8±0.2 ø3.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1.0 15.0±1.0 4.5±0.3 5.0±0.2 0.6 1 2 1: Anode 2: Cathode f = 100Hz, Duty cycle = 0.
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