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Infrared Light Emitting Diodes
LNA4602L
GaAlAs Infrared Light Emitting Diode
Unit: mm
For optical control systems
R1.75±0.1
s Features
Not soldered
4.2±0.3 2.3 1.9
2.4
φ3.5±0.2
4.8±0.3
• High-power output, high-efficiency • Light-emitting pattern of almost point source • Ultra-miniature, thin side-view type package
4.5±0.3
2.54±0.25
2.4
1.2
2.8 1.8
2− 0.98±0.2
1.66±0.25
Parameter Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol IFP VR Topr Tstg
Ratings 1.2 3 −20 to +60 −30 to +70
Unit A V °C °C
1 2.54
10 min.
s Absolute Maximum Ratings Ta = 25°C
12.8 min.
2− 0.45±0.15
0.45±0.15
2
1: Cathode 2: Anode
Note) *: f = 100 Hz, Duty Cycle = 0.
LNA4602L Datasheet
