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Infrared Light Emitting Diodes
LNA4905L
GaAs Infrared Light Emitting Diode
Unit : mm
5.7±0.2 2 Max. Not soldered
For optical control equipment s Features
• High output power, high-efficiency : (15 mW min.) • Quick response, high speed modulation (fC=30 MHz typ.) • Transparent epoxy resin package
φ5±0.2
1
4.4±0.3 1 12.0±1.0 14.0±1.0
5.7±0.2
s Absolute Maximum Ratings Ta=25°C
Parameter Power dissipation Forward current(DC) Pulse forward current Reverse voltage(DC) Operating ambient temperature Storage temperature
*
2-1±0.15 2-0.6±0.15
0.6±0.15
Symbol PD IF IFP VR Topr Tstg
Ratings 190 100 1 3 −25 to +85 −30 to +100
Unit mW mA A V °C °C
1 2.54* 2
Note 1. * : Indicates root dimensions of lead. 2. A dimension is as a reference figure as coming with no a public difference.
LNA4905L Datasheet
