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2PG011 Datasheet Silicon N-channel Enhancement IGBT

Manufacturer: Panasonic

Overview: This product plies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits.

Key Features

  • s.
  • Low collector-emitter saturation voltage: VCE(sat) < 2.5 V.
  • High-speed switching: tf = 185 ns (typ. ).
  • Package.
  • Code TO-220D-A1.
  • Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
  • Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note).
  • : Assurance of repetitive pulse. (Repetitive period.

More Datasheets from Panasonic

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2PG001 N-channel enhancement mode IGBT
2PG002 N-Channel IGBT
2PG006 Silicon N-channel enhancement IGBT
2PG009 Silicon N-Channel IGBT

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