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2PG011 - Silicon N-Channel Enhancement IGBT

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Panasonic

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2PG011 Silicon N-Channel Enhancement IGBT by Panasonic - Datasheet Preview — Datasheet preview – 2PG011

Datasheet Details

Part number	2PG011
Manufacturer	Panasonic
File Size	465.69 KB
Description	Silicon N-Channel Enhancement IGBT
Datasheet	2PG011 Datasheet
Additional preview pages of the 2PG011 datasheet.

Product details

Features

s.
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V.
High-speed switching: tf = 185 ns (typ. ).
Package.
Code TO-220D-A1.
Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note).
: Assurance of repetitive pulse. (Repetitive period.

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Published: Apr 22, 2014 |