2PG011 Datasheet | Panasonic

This product plies with the RoHS Directive (EU 2002/95/EC). IGBT Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits - Features - Low collector-emitter saturation voltage: VCE(sat) < 2.5 V - High-speed switching: tf = 185 ns (typ.) - Package - Code TO-220D-A1 - Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current - Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) - : Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of...