2PG011 - Silicon N-Channel Enhancement IGBT

Datasheet Summary

Features

s.
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V.
High-speed switching: tf = 185 ns (typ. ).
Package.
Code TO-220D-A1.
Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note).
: Assurance of repetitive pulse. (Repetitive period.

Panasonic

📥 Download Datasheet

Datasheet Details

Part number	2PG011
Manufacturer	Panasonic
File Size	465.69 KB
Description	Silicon N-Channel Enhancement IGBT
Datasheet	2PG011 Datasheet
Additional preview pages of the 2PG011 datasheet.

📁 Similar Datasheet

2PG401 - Insulated Gate Bipolar Transistor (Panasonic Semiconductor)
2PG402 - Insulated Gate Bipolar Transistor (Panasonic Semiconductor)

Other Datasheets by Panasonic

2PG001 - N-channel enhancement mode IGBT
2PG002 - N-Channel IGBT
2PG006 - Silicon N-channel enhancement IGBT
2PG009 - Silicon N-Channel IGBT

Full PDF Text Transcription

Click to expand full text

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)  Package  Code TO-220D-A1  Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively. T ≤ 5.

Published: Apr 22, 2014 |