AQV410EH Datasheet Photo Mos Relay

Manufacturer: Panasonic

Overview: Normally closed type with reinforced insulation (AQV410EH, 414EH) (AQV412EH) GE 1 Form B (AQV41❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	AQV410EH
Manufacturer	Panasonic
File Size	161.61 KB
Description	Photo MOS Relay
Datasheet	AQV410EH AQV412EH Datasheet (PDF)

Key Features

1. 1 Form B output type 2. 60V type couples high capacity (0.55A) with low on-resistance (Typ. 1Ω). 3. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N.
N+ Drain electrode 4. Controls low.

AQV410EH Distributor

More Datasheets from Panasonic

Part Number	Description
AQV412EH	Photo MOS Relay
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AQV414E	Photo MOS Relay
AQV414EH	Photo MOS Relay
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AQV453A	Photo MOS Relay
AQV454	Photo MOS Relay
AQV454A	Photo MOS Relay
AQV454H	Photo MOS Relay