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Normally closed type with reinforced insulation
(AQV410EH, 414EH) (AQV412EH)
GE 1 Form B
(AQV41❍EH)
8.8 .346
6.4 .252
8.8 .346
3.9 .154
6.4 .252
3.6 .142
(Height includes standoff)
mm inch
16 25 34
RoHS compliant
FEATURES
1. 1 Form B output type 2. 60V type couples high capacity (0.55A) with low on-resistance (Typ. 1Ω). 3. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
N– N+
Drain electrode
4.
AQV412EH Datasheet
