MA115 - Silicon epitaxial planar type

Panasonic

Key Features

Small S-mini type package, allowing high-density mounting.
High reverse voltage VR 1.25±0.1 0.35±0.1 0.7±0.1 1 0 to 0.1 1.7±0.1 0.16+0.1.
0.06 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current.
Junction temperature Storage temperature Note).
: t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 200 200 200 600 Unit V V mA mA 0.

MA115 silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA115
Manufacturer	Panasonic
File Size	127.87 KB
Description	Silicon epitaxial planar type
Datasheet	MA115 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rectifier Diodes MA2J115 (MA115) Silicon epitaxial planar type Unit : mm For small power current rectification I Features • Small S-mini type package, allowing high-density mounting • High reverse voltage VR 1.25±0.1 0.35±0.1 0.7±0.1 1 0 to 0.1 1.7±0.1 0.16+0.1 –0.06 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 200 200 200 600 Unit V V mA mA 0 to 0.