MA2H735 Datasheet | Panasonic

Schottky Barrier Diodes (SBD) Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 - Small and thin Half New Mini-power package - Allowing to rectify under (IF(AV) = 1 A) condition - Low VF (forward voltage) type: VF > 0.5 V at IF = 1 A 1.9 ± 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current- Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 30 125 - 40 to +125 Unit V V A A °C °C - 0.05 0.9 ± 0.2 3.8 ± 0.2 0.9 ± 0.2 1 : Anode 2 : Cathode Half New Mini-Power Package Marking Symbol: A Note) - : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time- Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 m A Irr = 0.1 - IR, RL = 100 Ω 50 30 Conditions Min Typ Max 1 0.50 Unit m A V p F ns Note) 1. Rated input/output frequency: 20 MHz 2. - : trr measuring instrument Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 0.1 - IR IF = 100 m A IR = 100 m A RL = 100...