The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
Unit : mm
For switching circuits
3.2 ± 0.1 0 to 0.05
• Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V at IF = 1 A
1.9 ± 0.1
2
1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 30 30 1 30 125 −40 to +125
Unit V V A A °C °C
0.25 − 0.05
0.9 ± 0.2 3.8 ± 0.2
0.9 ± 0.