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MA2H735 - Schottky Barrier Diodes (SBD)

Features

  • 1 MA2H735 IF  V F 1 Schottky Barrier Diodes (SBD) IR  V R 10 Ta = 125°C 1 75°C 25°C.
  • 20°C Ct  VR 300 Ta = 25°C 75°C 10.
  • 1 Terminal capacitance Ct (pF) Ta = 125°C 10.
  • 1 250 Reverse current IR (mA) Forward current IF (A) 200 10.
  • 2 150 10.
  • 3 10.
  • 2 25°C 100 10.
  • 4 10.
  • 3 50 10.
  • 5 0 0.1 0.2 0.3 0.4 0.5 0.6 10.
  • 4 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse v.

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Datasheet Details

Part number MA2H735
Manufacturer Panasonic
File Size 43.79 KB
Description Schottky Barrier Diodes (SBD)
Datasheet download datasheet MA2H735 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V at IF = 1 A 1.9 ± 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 30 125 −40 to +125 Unit V V A A °C °C 0.25 − 0.05 0.9 ± 0.2 3.8 ± 0.2 0.9 ± 0.
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