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MA2H735 Datasheet Schottky Barrier Diodes (sbd)

Manufacturer: Panasonic

Overview: Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V at IF = 1 A 1.9 ± 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 30 125 −40 to +125 Unit V V A A °C °C 0.25 − 0.05 0.9 ± 0.2 3.8 ± 0.2 0.9 ± 0.2 1 : Anode 2 : Cathode Half New Mini-Power Package Marking Symbol: A Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 50 30 Conditions Min Typ Max 1 0.50 Unit mA V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 1.85 ± 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25°C 1.0 ± 0.

Key Features

  • 1 MA2H735 IF  V F 1 Schottky Barrier Diodes (SBD) IR  V R 10 Ta = 125°C 1 75°C 25°C.
  • 20°C Ct  VR 300 Ta = 25°C 75°C 10.
  • 1 Terminal capacitance Ct (pF) Ta = 125°C 10.
  • 1 250 Reverse current IR (mA) Forward current IF (A) 200 10.
  • 2 150 10.
  • 3 10.
  • 2 25°C 100 10.
  • 4 10.
  • 3 50 10.
  • 5 0 0.1 0.2 0.3 0.4 0.5 0.6 10.
  • 4 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse v.

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