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Schottky Barrier Diodes (SBD)
MA2H736
Silicon epitaxial planar type
Unit : mm
For switching circuits
3.2 ± 0.1 0 to 0.05
• Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition
1.9 ± 0.1
2
1
I Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 40 40 1 30 125 −40 to +125 V V A A °C °C
3.8 ± 0.2 0.25 − 0.05 1.85 ± 0.2
+ 0.1
Parameter
Symbol
Rating
Unit
0.9 ± 0.2
0.9 ± 0.