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MA2H736 - Schottky Barrier Diodes (SBD)

Features

  • 1 MA2H736 IF  V F 1 Schottky Barrier Diodes (SBD) VF  Ta 0.8 0.7 1 75°C 25°C.
  • 20°C 10 Ta = 125°C IR  VR 10.
  • 1 Ta = 125°C Forward current IF (A) 0.6 0.5 0.4 0.3 0.2 0.1 Reverse current IR (mA) Forward voltage VF (V) 75°C 10.
  • 1 10.
  • 2 IF = 1 A 10.
  • 3 10.
  • 2 25°C 10.
  • 4 100 mA 10 mA 10.
  • 3 10.
  • 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.
  • 40 10.
  • 4 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward.

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Datasheet Details

Part number MA2H736
Manufacturer Panasonic
File Size 43.91 KB
Description Schottky Barrier Diodes (SBD)
Datasheet download datasheet MA2H736 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2H736 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition 1.9 ± 0.1 2 1 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 40 40 1 30 125 −40 to +125 V V A A °C °C 3.8 ± 0.2 0.25 − 0.05 1.85 ± 0.2 + 0.1 Parameter Symbol Rating Unit 0.9 ± 0.2 0.9 ± 0.
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