Half New Mini-power package
3.2±0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current.
Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125.
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Schottky Barrier Diodes (SBD)
MA2HD07
Silicon epitaxial planar type
Unit: mm
1.9±0.1 2 1.85±0.2
0.9±0.2 0.9±0.2 8°
For high frequency rectification I Features
• IF(AV) = 1 A rectification is possible • Half New Mini-power package
3.2±0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 −40 to +125 Unit V V A A °C °C
8°
1
0.25+0.1 –0.05
0 to 0.05
1.0±0.
MA2HD07 Datasheet
