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Schottky Barrier Diodes (SBD)
MA2HD08
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
3.2 ± 0.3 0 to 0.05
• Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition
1.9 ± 0.3
2
1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 −40 to +125 Unit V
0.9 ± 0.4 0.9 ± 0.4 3.8 ± 0.2 0.25 − 0.05 1.85 ± 0.3
+ 0.