0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 30.
40 to +125.
40 to +125 Unit V V A A °C °C
1.2 ± 0.4 5.0.
0.1
+ 0.4
1.2 ± 0.4
1 : Anode 2 : Cathode New Mini Power Type Package (2-pin)
Marking Symbol: PK
Note).
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diodes (SBD)
MA2Q705
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.4 ± 0.3 0 to 0.05
• New Mini-power type package (2-pin) • Allowing to rectify under (IF(AV) = 1.5 A) condition • Low VF (forward voltage) type: VF < 0.37 V (at IF = 1.0 A)
2.5 ± 0.3
I Features
2
1
0.25 − 0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 30 −40 to +125 −40 to +125 Unit V V A A °C °C
1.2 ± 0.4 5.0 − 0.1
+ 0.4
1.2 ± 0.