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MA2Q705 - Schottky Barrier Diodes (SBD)

Features

  • 2 1 0.25.
  • 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 30.
  • 40 to +125.
  • 40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0.
  • 0.1 + 0.4 1.2 ± 0.4 1 : Anode 2 : Cathode New Mini Power Type Package (2-pin) Marking Symbol: PK Note).
  • : The pe.

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Datasheet Details

Part number MA2Q705
Manufacturer Panasonic
File Size 44.92 KB
Description Schottky Barrier Diodes (SBD)
Datasheet download datasheet MA2Q705 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2Q705 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 0 to 0.05 • New Mini-power type package (2-pin) • Allowing to rectify under (IF(AV) = 1.5 A) condition • Low VF (forward voltage) type: VF < 0.37 V (at IF = 1.0 A) 2.5 ± 0.3 I Features 2 1 0.25 − 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 30 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.
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