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MA2Q737 - Schottky Barrier Diodes

Features

  • 2 1 0.25.
  • 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current.
  • 1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 60.
  • 40 to +125.
  • 40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0.
  • 0.1 + 0.4 1.2 ± 0.4 Non-repetitive peak forward surge current.
  • 2 Junction temperature Storage temperature 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PC Note).
  • 1.

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Datasheet Details

Part number MA2Q737
Manufacturer Panasonic
File Size 46.29 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2Q737 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2Q737 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 0 to 0.05 • Forward current (average) IF(AV): 1.5 A type • Reverse voltage (DC value) VR: 30 V • Allowing automatic insertion with the emboss taping 2.5 ± 0.3 I Features 2 1 0.25 − 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 60 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.
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