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Schottky Barrier Diodes (SBD)
MA2Q735
Silicon epitaxial planar type
Unit : mm
For switching circuits
4.4 ± 0.3 0 to 0.05
I Features
• Forward current (average) IF(AV): 1 A type • Reverse voltage (DC value) VR: 30 V • Allowing automatic insertion with the emboss taping
2.5 ± 0.3
2 1
0.25 − 0.05
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 30 30 1 30 −40 to +125 −40 to +125
Unit V V A A °C °C
1.2 ± 0.4 5.0 − 0.1
+ 0.4
1.2 ± 0.
MA2Q735 Datasheet
