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MA2Q736 - Schottky Barrier Diodes

Features

  • 2 1 0.25.
  • 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current.
  • 1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 40 40 1 30.
  • 40 to +125.
  • 40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0.
  • 0.1 + 0.4 1.2 ± 0.4 Non-repetitive peak forward surge current.
  • 2 Junction temperature Storage temperature 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PB Note).
  • 1 :.

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Datasheet Details

Part number MA2Q736
Manufacturer Panasonic
File Size 50.05 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2Q736 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2Q736 Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 • Forward current (average) IF(AV): 1 A type • Reverse voltage (DC value) VR: 40 V • Allowing automatic insertion with the emboss taping 2.5 ± 0.3 I Features 2 1 0.25 − 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 40 40 1 30 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.
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