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MA3X740 - Silicon epitaxial planar type

Key Features

  • 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Single Double.
  • 1 Single Double.
  • 1 VR VRRM IF(AV) IFM IFSM Tj Tstg 30 30 200 130 300 220 1 0.7 150.
  • 55 to +150 V V mA 0.1 to 0.3 0.4 ± 0.2 mA Single Non-repetitive peak forward surge current.
  • 2 Double.
  • 1 Junction temperature Storage temperature A °C °C Marking Symbol: M3C Internal Connection 1 3 2 Note).
  • 1 : Value per chip.
  • 2 :.

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Datasheet Details

Part number MA3X740
Manufacturer Panasonic
File Size 46.62 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X740 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3X740 Silicon epitaxial planar type For super high speed switching circuit For small current rectification • Two MA3X721s are contained in one package (series connection) • Allowing to rectify under (IF(AV) = 200 mA) condition (single diode value) 2.9 − 0.05 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 Unit : mm 0.65 ± 0.15 0.95 1.9 ± 0.2 I Features 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Single Double*1 Single Double*1 VR VRRM IF(AV) IFM IFSM Tj Tstg 30 30 200 130 300 220 1 0.7 150 −55 to +150 V V mA 0.1 to 0.3 0.4 ± 0.