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MA3X748 Datasheet Silicon Epitaxial Planar Type

Manufacturer: Panasonic

Overview: Schottky Barrier Diodes (SBD) MA3X748 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 • Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.

Key Features

  • 1.1.
  • 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125.
  • 55 to +125 Unit V V mA A °C °C 0.1 to 0.3 0.4 ± 0.2 0.8 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M4E Internal Connection 1 3 2 Note.

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