0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125.
55 to +125 Unit V V mA A °C °C
0.1 to 0.3 0.4 ± 0.2
0.8
1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin)
Marking Symbol: M4E Internal Connection
1 3 2
Note.
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Schottky Barrier Diodes (SBD)
MA3X748
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.65 ± 0.15
2.8 − 0.3 1.5 − 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
• Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
I Features
1.1 − 0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 −55 to +125 Unit V V mA A °C °C
0.1 to 0.3 0.4 ± 0.2
0.
MA3X748 Datasheet
