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MIP2E2DMU - IPD

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(IPD) MIP2E2DMU MOS ■ • • ■ • U-G2 • 1: Control 2: Source 3: Drain ■ • ■ Ta = 25°C ± 3°C VD VC ID IDP IC Tch Tstg 700 10 0.585 0.82 0.1 150 −55 ∼ +150 V V A A A °C °C ■ : MIP2E2D http://www.DataSheet4U.net/ ■ Control 1 3 Drain S R Q Q MOSFET Max Duty Clock Sawtooth S V-I R Q Q 2 Source : 2010 3 SLB00040BJD 1 datasheet pdf - http://www.DataSheet4U.net/ MIP2E2DMU ■ TC = 25°C ± 2°C fOSC MAXDC PWM * * VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V 90 66 100 69 11 20 110 72 kHz % dB mA/µs GPWM m VC < VC(ON) VC = VC(CNT) − 0.2 V IC(SB) IC(OP) VC(ON) VC(OFF) / ∆VC TSW / TTIM fTIM IC(CHG) VC(CNT) * 0.05 0.7 5.1 4.1 0.5 0.30 1.8 6.0 5.0 1.0 2 0.5 0.6 2.7 6.6 5.5 1.5 mA mA V V V % Hz VC = 0 V VC = 5 V −2.5 −2.0 5.7 −1.9 −1.2 6.2 10 −1.2 − 0.5 6.