Datasheet Summary
Transistor
Silicon NPN triple diffusion planer type
For high voltage-withstand switching
Unit: mm
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
4.0 s Features q q q q q
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.65 max.
1.0 1.0
0.45- 0.05
0.45- 0.05
+0.1
+0.1
2.5±0.5 1 2
2.5±0.5 3
(Ta=25˚C)
Ratings 400 400 5 1 0.5 1 150
- 55 ~ +150 Unit V V V A A W ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+
- 0.05
Parameter Collector...