Datasheet Summary
Transistor
Silicon NPN epitaxial planer type
For low-power general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q
1.5 R0.9 R0.9
(Ta=25˚C)
Ratings 60 50 7 200 100 400 150
- 55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
EIAJ:SC- 71 M Type Mold Package s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter...
