Datasheet Summary
Silicon Junction FETs (Small Signal)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.4 unit: mm
1.6±0.15 0.8±0.1 0.4 q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.6±0.1
1.0±0.1
0.45±0.1 0.3
0.75±0.15
Parameter Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol VGDO VGSO ID IG PD Tch Tstg
Ratings
- 40
- 40 ±1 10 125 125
- 55 to +125
Unit V V mA mA mW °C °C
1:...