Datasheet Summary
Power F-MOS FETs
Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm
0.7±0.1 energy capability guaranteed switching
16.7±0.3
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2 q High-speed q No secondary breakdown
7.5±0.2
ø3.1±0.1 s Applications q High-speed q For switching (switching mode regulator)
4.0 high-frequency power amplification
14.0±0.5
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 +0.2 -0.1 s...