Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 5.5 mW (typ.) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ.)
4.5±0.3
2.8 1.8 1.0
4.8±0.3 2.4 2.4
12.5 min. 10.0 min.
2-0.98±0.2 2-0.45±0.15 0.45±0.15
2.54 R1.75
Not soldered
ø3.5±0.2
4.2±0.3 2.3...