Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.25
2-0.8 max. 2-0.6±0.15 2.54
For optical control systems Features
High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package Long lead-wire type
26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2
ø5.0±0.2
Good radiant power output linearity with respect to input current
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
- Symbol PD IF IFP- VR Topr Tstg
Ratings 160 100 1.5 3
- 25 to +85
-...