Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5±0.2
Features
High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package
3.9±0.25
4.5±0.15 3.5±0.15
2.1±0.15 1.6±0.15 0.8±0.1
12.8 min.
(2.95)
2-1.2±0.3 2-0.45±0.15
0.45±0.15
2.54...