Datasheet Summary
Infrared Light Emitting Diodes
GaAlAs on GaAs Infrared Light Emitting Diode
Unit: mm
0.8 max.
For optical control systems s Features
- High-power output, high-efficiency: PO = 9 mW min.
- Emitted light spectrum suited for silicon photodetectors
- Ultra-miniature, thin side-view type package
- Long lifetime, high reliability
1.95±0.25 3.0±0.3
φ1.1 R0.5
1.4±0.2 0.9 0.5
3.5±0.3 12 min.
2.4 1.1 Not soldered 2.15 max.
2- 0.5±0.15
0.3±0.15 s...