Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package
13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2
ø5.0±0.2
2-1.0±0.15...