Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : Ie = 10 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package
13.5±1.0 11.5±1.0 3.9±0.3 1.0 7.65±0.2
ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode...