Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 4.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.)
1.05±0.1 1
0.5±0.1
Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2
45 ˚
2.2±0.15 (0.7) 0.15
(0.7)
1.8 2.8±0.2
Narrow directivity : θ = 18 deg. (typ.) Ultra-miniature double ended package
2.8±0.2
R0.9...