Datasheet Summary
.. posite Transistors
XN01501 (XN1501)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification
- Features
- Two elements incorporated into one package (Emitter-coupled transistors)
- Reduction of the mounting area and assembly cost by one half
2.90+0.20
- 0.05 1.9±0.1 (0.95) (0.95) 4 5
0.16+0.10
- 0.06
1.50+0.25
- 0.05
2.8+0.2
- 0.3
2 0.30+0.10
- 0.05 10˚
- Basic Part Number
- 2SD0601A (2SD601A) × 2
1.1+0.2
- 0.1
0.65±0.15
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage...