Datasheet Summary
posite Transistors
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For high speed switching
2.1±0.1
0.65 q q q
For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package.
2.0±0.1 s Features
1 2 3
6 5 4
0.9±0.1 s Basic Part Number of Element q
0 to 0.1
2SC3757 × 2 elements
1 : Base (Tr1) 2 : Emitter (Tr1) 3 : Base (Tr2)
0.7±0.1
0.2±0.1 s...