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PE4245 - SPDT UltraCMOS RF Switch

Datasheet Summary

Description

The PE4245 RF switch is designed to cover a broad range of applications from near DC to 4000 MHz.

This switch integrates on-board CMOS control logic with a low voltage CMOS compatible control input.

Using a +3-volt nominal power supply voltage, a 1 dB compression point of +25 dBm can be achieved.

Features

  •  Single 3.0V power supply.
  •  Low insertion loss: 0.6 dB at 1000 MHz, 0.7 dB at 2000 MHz.
  •  High isolation of 42 dB at 1000 MHz, 32 dB at 2000 MHz.
  •  Typical 1 dB compression of +25 dBm.
  •  Single-pin CMOS logic control.
  •  Available in a 6-lead DFN package Figure 2. Package Type 6-lead DFN ESD RF1 ESD ESD CMOS Control Driver CTRL Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω) Parameter Conditions Minimum Typical Maximum Operation Frequ.

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Datasheet Details

Part number PE4245
Manufacturer Peregrine Semiconductor
File Size 674.35 KB
Description SPDT UltraCMOS RF Switch
Datasheet download datasheet PE4245 Datasheet
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Product Description The PE4245 RF switch is designed to cover a broad range of applications from near DC to 4000 MHz. This switch integrates on-board CMOS control logic with a low voltage CMOS compatible control input. Using a +3-volt nominal power supply voltage, a 1 dB compression point of +25 dBm can be achieved. The PE4245 also exhibits excellent isolation of better than 42 dB at 1000 MHz and is offered in a small 3 x 3 mm DFN package. The PE4245 is manufactured on pSemi’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFC Product Specification PE4245 SPDT UltraCMOS™ RF Switch DC–4000 MHz Features  Single 3.
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