Datasheet4U Logo Datasheet4U.com

PE42820 - SPDT RF Switch

Description

The PE42820 is a HaRP™ technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications.

Features

  • low insertion loss, high power handling, and is offered in a 32-lead 5 × 5 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE42820 is manufactured on PSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. PSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the perf.

📥 Download Datasheet

Datasheet preview – PE42820

Datasheet Details

Part number PE42820
Manufacturer Peregrine Semiconductor
File Size 828.41 KB
Description SPDT RF Switch
Datasheet download datasheet PE42820 Datasheet
Additional preview pages of the PE42820 datasheet.

📁 Similar Datasheet

  • PE42445 - High Isolation UltraCMOS SP4T RF Switch (pSemi)
  • PE42482 - SP8T RF Switch (pSemi)
  • PE42512 - RF Switch (pSemi)
  • PE42726 - SPDT RF Switch (pSemi)
  • PE4290X - (PE-xxxxX) General Purpose Transformers (Pulse)
  • PE4005 - RF CONNECTOR (Pasternack Enterprises)
  • PE4013S - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE4013SA - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE4025KC - N and P Channel Enhancement Mode Power MOSFET (ChipSourceTek)
  • PE40F - THYRISTOR MODULE (SanRex Corporation)
Other Datasheets by Peregrine Semiconductor

Full PDF Text Transcription

Click to expand full text
Product Description The PE42820 is a HaRP™ technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications. This switch is a pin-compatible upgraded version of the PE42510A with a wider frequency and power supply range, and external negative supply option. It maintains exceptional linearity and power handling from 30 MHz through 2.7 GHz. PE42820 also features low insertion loss, high power handling, and is offered in a 32-lead 5 × 5 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE42820 is manufactured on PSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
Published: |