PE42820 Datasheet | pSemi

Description The PE42820 is a Ha RP™ technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications. This switch is a pin-patible upgraded version of the PE42510A with a wider frequency and power supply range, and external negative supply option. It maintains exceptional linearity and power handling from 30 MHz through 2.7 GHz. PE42820 also features low insertion loss, high power handling, and is offered in a 32-lead 5 × 5 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE42820 is manufactured on PSemi’s Ultra CMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. PSemi’s Ha RP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the Ultra CMOS process, offering the performance of Ga As with the economy and integration of conventional CMOS. Product Specification PE42820 Ultra CMOS® SPDT RF Switch 30- 2700 MHz Features - High power handling - 45 d Bm @ 850 MHz, 32W - 44 d Bm @ 2 GHz, 25W - Exceptional linearity - 85 d Bm IIP3 @ 850 MHz - 81 d Bm IIP3 @ 2.7 GHz - Low insertion loss - 0.25 d B @ 850 MHz - 0.40 d B @ 2 GHz - Wide supply range of 2.3- 5.5V - +1.8V control logic patible - ESD performance - 1.5 k V HBM on all pins - External negative supply option Figure 2. Package Type 32-lead 5 × 5 mm QFN Figure 1. Functional Diagram RF1 RF2 CMOS Control/ Driver and ESD VDD V1 VSSEXT DOC-52312 Document No. DOC-94660-1 │.psemi. ©2019 p Semi Corp. All rights reserved. Page 1 of 12 Product Specification Table 1. NEloercmtraicl aml o Sdpee1c:i Vfic DDat=io3n.3s V@, V+S2S5_E°XCT =(Z0SV=o Zr LB=yp50aΩss),munoldees2s: otherwise noted VDD = 3.3V, VSS_EXT = -...