PE42821 Datasheet | pSemi

Description The PE42821 is a Ha RP™ technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications. This switch is a pin-patible faster switching version of the PE42820. It maintains high linearity and power handling from 100 MHz through 2.7 GHz. PE42821 also features low insertion loss and is offered in a 32-lead 5 × 5 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE42821 is manufactured on Peregrine’s Ultra CMOS® process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate. Peregrine’s Ha RP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the Ultra CMOS process, offering the performance of Ga As with the economy and integration of conventional CMOS. Product Specification Ultra CMOS® SPDT RF Switch 100- 2700 MHz Features -  High power handling -  45 d Bm @ 850 MHz, 32W -  44 d Bm @ 2 GHz, 25W -  High linearity -  82 d Bm IIP3 @ 850 MHz -  76 d Bm IIP3 @ 2.7 GHz -  Low insertion loss -  0.35 d B @ 850 MHz -  0.60 d B @ 2 GHz -  Fast switching time of 4 µs (bypass mode) -  Wide supply range of 2.3- 5.5V -  +1.8V control logic patible -  ESD performance -  1.5 k V HBM on all pins -  External negative supply option Figure 2. Package Type 32-lead 5 × 5 mm QFN Figure 1. Functional Diagram DOC-52312 Document No. DOC-13714-4 │ .psemi. ©2012-2015 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 12 Product Specification Table 1. Electrical Specifications @ +25 °C (ZS = ZL = 50Ω), unless otherwise noted Normal mode1: VDD = 3.3V, VSS_EXT = 0V or Bypass mode2: VDD = 3.3V, VSS_EXT = - 3.3V Parameter Path Condition Min Typ Max Insertion loss3 100 MHz- 1 GHz RFC- RFX 1- 2 GHz 0.40 0.55 0.60 0.80 2- 2.7...