PE42822 Datasheet | pSemi

Features - Excellent single-event peak power handling of 46.1 d Bm LTE - Exceptional linearity performance across all frequencies - Input IP3: 65 d Bm - Input IP2: 120 d Bm - Extended operating temperature of 105 °C - 1.8V/3.3V TTL patible control - High ESD performance of 3 k V HBM on RF pins to ground - Packaging - 16-lead 3 × 3 × 0.85 mm QFN Applications - Wireless infrastructure - Receiver protection switch Figure 1 - PE42822 Functional Diagram RFC RF1 50Ω 50Ω CMOS Control Driver and ESD LS CTRL VDD RF2 Product Description The PE42822 is a Ha RP™ technology-enhanced absorptive 50Ω SPDT RF protection switch designed for use in high power and high performance wireless infrastructure applications such a mid-power microcell products, supporting frequencies up to 3.8 GHz. This switch features high linearity, which remains invariant across the full supply range. The PE42822 also features exceptional isolation, fast switching time and is offered in a 16-lead 3 × 3 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE42822 is manufactured on Peregrine’s Ultra CMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. Peregrine’s Ha RP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the Ultra CMOS process, offering the performance of Ga As with the economy and integration of conventional CMOS. ©2015, Peregrine Semiconductor Corporation. All rights reserved. - Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification .psemi. DOC-67330-2 - (09/2015) PE42822 SPDT RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this...