PE4283 Datasheet | pSemi

Description The PE4283 RF Switch is designed to cover a broad range of applications from DC through 4000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-patible control interface, and can be controlled using either single-pin or plementary control inputs. The PE4283 operates using a +3 volt power supply. The PE4283 SPDT High Power RF Switch is manufactured on Peregrine’s Ultra CMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of Ga As with the economy and integration of conventional CMOS. Figure 1. Functional Diagram SPDT High Power Ultra CMOS™ DC - 4.0 GHz RF Switch Features - Single-pin or plementary CMOS logic control inputs - 1.5 k V ESD tolerance - Low insertion loss: 0.65 d B at 1000 MHz, 0.70 d B at 2500 MHz - RFC-RF1/RF2 isolation of 33.5 d B at 1000 MHz, 21.5 d B at 2500 MHz - RF1-RF2 isolation of 37.5 d B at 1000 MHz, 22 d B at 2500 MHz - Typical input 1 d B pression point of +32 d Bm - Ultra-small SC-70 package Figure 2. Package Type SC-70 RF1 RF2 6-lead SC-70 CMOS Control Driver V1 V2 Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω) Parameter Operation Frequency Insertion Loss Conditions - 4000 1000 MHz 2500 MHz 1000 MHz 2500 MHz 1000 MHz 2500 MHz 1000 MHz 2500 MHz 50% CTRL to 0.1 d B of final value, 1 GHz 50% CTRL to 25 d B isolation, 1 GHz 1000 MHz 1000 MHz, 20 d Bm input power Min Typical Max Units MHz d B d B d B d B d B d B d B d B 0.65 0.70 31.5 19.5 35.5 20 33.5 21.5 37.5 22 19 16 0.725 0.625 30 +32 +53 0.75 0.80 Isolation: RFC - RF1/RF2 Isolation: RF1 - RF2 Return Loss ‘ON’ Switching Time ‘OFF’ Switching Time Input 1 d B pression Input...