PE42851 Datasheet | pSemi

Description The PE42851 is a Ha RP™ technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 d Bm continuous wave (CW). It delivers high linearity and excellent harmonics performance. It has both a standard and attenuated RX mode. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42851 is manufactured on p Semi’s Ultra CMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of Ga As with the economy and integration of conventional CMOS. Figure 1. Package Type 32-lead 5 × 5 mm QFN Product Specification Ultra CMOS® SP5T RF Switch 100- 1000 MHz Features - Dual mode operation: SP5T or SP3T - Ha RP™ technology enhanced - Fast settling time - No gate and phase lag - No drift in insertion loss and phase - Up to 45 d Bm instantaneous power in 50Ω - Up to 40 d Bm instantaneous power < 8:1 VSWR - 36 d B TX to RX isolation - Low harmonics of 2fo and 3fo = - 80 d Bc (1.15:1 VSWR) - ESD performance - 1.5 k V HBM on all pins Figure 2. Functional Diagram of SP3T Configuration TX1 TX2 TX3 TX4 CMOS Control Driver and ESD V1 V2 V3 ANT can be tied to TX1 and TX2 or TX3 and TX4 Document No. DOC-13014-6 │ .psemi. Figure 3. Functional Diagram of SP5T Configuration TX1 TX2 TX3 TX4 CMOS Control Driver and...