BLU60-12 Datasheet | Philips Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz munications band. FEATURES - multi-base structure and emitter-ballasting resistors for an optimum temperature profile. - internal matching to achieve an optimum wideband capability and high power gain. - gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a mon-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V 12,5 f MHz 470 PL W 60 Gp d B > 4,4 BLU60/12 The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. ηC % > 55 PIN CONFIGURATION PINNING PIN 1 DESCRIPTION emitter emitter base collector emitter emitter handbook, halfpage 2 3 4 5 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. March 1986 2 http://.. Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 25 °C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max. BLU60/12 36 V 16,5 V 4 V 12 A 36 A 110 W 200 °C - 65 to + 150 °C handbook, halfpage MDA345 Prf (W) 150 I 50 0 0 40 80 120 160 200 Th ( °C) I Continuous operation (f > 1 MHz). II Short-time operation during mismatch (f > 1 MHz). Fig.2 Power/temperature derating curves. MAXIMUM THERMAL RESISTANCE Dissipation = 72 W; Tamb = 25 °C From junction to mounting base (r.f. operation) From mounting base to heatsink Rth...