BLU60
BLU60 is UHF power transistor manufactured by Philips Semiconductors.
DESCRIPTION
N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz munications band. FEATURES
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
- internal matching to achieve an optimum wideband capability and high power gain.
- gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a mon-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V 12,5 f MHz 470 PL W 60 Gp d B > 4,4
BLU60/12
The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.
ηC % > 55
PIN CONFIGURATION
PINNING PIN 1 DESCRIPTION emitter emitter base collector emitter emitter handbook, halfpage
2 3 4 5 6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged.
March 1986
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Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 25 °C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max.
BLU60/12
36 V 16,5 V 4 V 12 A 36 A 110 W 200 °C
- 65 to + 150 °C handbook, halfpage
MDA345
Prf (W) 150
I 50
0 0 40 80 120 160 200 Th ( °C)
I Continuous operation (f > 1 MHz). II Short-time operation during mismatch (f > 1 MHz).
Fig.2 Power/temperature derating curves.
MAXIMUM THERMAL RESISTANCE Dissipation = 72 W; Tamb = 25 °C From junction to mounting base (r.f. operation) From mounting base to heatsink Rth...
