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BLU60 - UHF power transistor

General Description

N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

Key Features

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
  • internal matching to achieve an optimum wideband capability and high power gain.
  • gold metallization ensures excellent reliability. QUICK.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BLU60-12 UHF power transistor
BLU11 UHF power transistor
BLU11SL UHF power transistor
BLU20 UHF power transistor
BLU20-12 UHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. • internal matching to achieve an optimum wideband capability and high power gain. • gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w.