BLV45 Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz mmunications band.
BLV45 Key Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile
- gold metallization ensures excellent reliability
- internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envel