Datasheet Details
| Part number | BLV45 |
|---|---|
| Manufacturer | Philips Semiconductors (now NXP Semiconductors) |
| File Size | 88.33 KB |
| Description | VHF power transistor |
| Datasheet |
 BLV45 Datasheet
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General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.
Key Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
- gold metallization ensures excellent reliability.
- internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK.