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BLV75-12 - VHF power transistor

Download the BLV75-12 datasheet PDF. This datasheet also covers the BLV75 variant, as both devices belong to the same vhf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

Key Features

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability.
  • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLV75-Philips.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F.