BLV75-12 Datasheet | Philips Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz mmunications band. FEATURES - multi-base structure and emitter-ballasting resistors for an optimum temperature profile - gold metallization ensures excellent reliability - internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a mon-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 175 PL W 75 PINNING PIN 1 handbook, halfpage BLV75/12 Gp d B > 6,5 ηC % > 55 DESCRIPTION emitter emitter base collector emitter emitter 2 3 4 5 6 MSB006 Fig.1 Simplified outlinbe, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. August 1986 2 http://.. Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average peak value; f > 1 MHz Total power dissipation at Tmb = 25 °C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. v CBOM VCEO VEBO max. max. max. BLV75/12 36 V 16,5 V 4 V 15 A 45 A 150 W 200 °C - 65 to + 150 °C 102 handbook, halfpage MGP390 MGP391 handbook, halfpage IC (A) Ptot (W) ΙΙ 100 10 Th = 70 °C Tmb = 25 °C Ι 1 1 10 0 VCE (V) 102 0 100 Th (°C)...