PDB3814S Datasheet | Potens semiconductor

Preliminary datasheet 30V Dual N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X2 Dual 2EP Pin Configuration BVDSS 30V RDSON 30m ID 5.0A Features - 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications ˙ S1 G1 D2 D1 G2 S2 D1 D2 - MB / VGA / Vcore - POL Applications - SMPS 2nd SR G1 G2 S1...