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PDB3911L - P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V,-4.7A, RDS(ON) =55mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDB3911L
Manufacturer Potens semiconductor
File Size 799.80 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDB3911L Datasheet

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30V P-Channel MOSFETs PDB3911L General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2x2-6L 2EP Pin Configuration DDS S S DD D G D BVDSS -30V RDSON 55m ID -4.7A Features  -30V,-4.7A, RDS(ON) =55mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.