PDB3912L - N-Channel MOSFET

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,7.8A, RDS(ON) =20mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDB3912L n-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDB3912L
Manufacturer	Potens semiconductor
File Size	498.75 KB
Description	N-Channel MOSFET
Datasheet	PDB3912L Datasheet

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Preliminary datasheet 30V N-Channel MOSFETs PDB3912L General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2x2-6L 2EP Pin Configuration DDG DD S S S DD D GDD G D S BVDSS 30V RDSON 20m ID 7.8A Features  30V,7.