PDB3912L Datasheet | Potens semiconductor

Preliminary datasheet 30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN2x2-6L 2EP Pin Configuration DD S S S DD D BVDSS 30V RDSON 20m ID 7.8A Features - 30V,7.8A, RDS(ON) =20mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - MB / VGA / Vcore - POL Applications - SMPS 2nd...