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PDB3907Z - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-30A, RDS(ON) =18mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDB3907Z

Datasheet Details

Part number PDB3907Z
Manufacturer Potens semiconductor
File Size 754.78 KB
Description P-Channel MOSFET
Datasheet download datasheet PDB3907Z Datasheet
Additional preview pages of the PDB3907Z datasheet.

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Full PDF Text Transcription

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30V P-Channel MOSFETs PDB3907Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN3x3 Pin Configuration DDD D S SSG G D BVDSS -30V RDSON 18m ID -30A Features  -30V,-30A, RDS(ON) =18mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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