Potens semiconductor PDB3907Z
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDB3907Z |
|---|---|
| Datasheet | PDB3907Z Download |
| Manufacturer |  Potens semiconductor |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. DFN3x3 Pin Configuration DDD D S SSG G D BVDSS -30V RDSON 18m ID -30AFEATURES
● -30V,-30A, RDS(ON) =18mΩ@VGS = -10V● Fast switching
● Green Device Available
● Suit for -4.5V Gate Drive
APPLICATIONS
APPLICATIONS
● MB / VGA / Vcore● POL
APPLICATIONS
● Load Switch● LED Application S
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Di
