PDB3909L Datasheet | Potens semiconductor

30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN2x2-6L 2EP Pin Configuration D DS S DD DG DD G BVDSS -30V RDSON 30m ID -6.1A Features - -30V,-6.1A, RDS(ON) =30mΩ@VGS = -10V - Fast switching - Green Device Available - Suit for -4.5V Gate Drive Applications Applications - Notebook - Load Switch - Battery Protection - Hand-held...