Datasheet4U Logo Datasheet4U.com

PDR04N50 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 4A TO251 Pin Configuration D G DS G S.

📥 Download Datasheet

Datasheet preview – PDR04N50

Datasheet Details

Part number PDR04N50
Manufacturer Potens semiconductor
File Size 574.68 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDR04N50 Datasheet
Additional preview pages of the PDR04N50 datasheet.

📁 Similar Datasheet

  • PDR3G - 3A GLASS PASSIVATED RECTIFIER (Diodes Incorporated)
  • PDR5G - 5A GLASS PASSIVATED RECTIFIER (Diodes Incorporated)
  • PDR5K - 5A GLASS PASSIVATED RECTIFIER (Diodes)
  • PDR5KF - 5A GLASS PASSIVATED FAST RECOVERY RECTIFIER (Diodes)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
500V N-Channel MOSFETs PDR04N50 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 500V RDSON 3.
Published: |