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PDR04N65 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available ID 4A TO251 Pin Configuration D GD S G S.

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Datasheet Details

Part number PDR04N65
Manufacturer Potens semiconductor
File Size 572.33 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDR04N65 Datasheet
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650V N-Channel MOSFETs PDR04N65 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 650V RDSON 2.
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