PDR04N60 Overview
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply TO251 D GD S G S BVDSS 600V RDSON 2.2Ω ID.
PDR04N60 Key Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available